Charged defects in highly emissive organic wide-band-gap semiconductors | Zendy

Emil List | Zendy; C. H. Kim | Zendy; J. Shinar | Zendy; A. Pogantsch | Zendy; G. Leising | Zendy; W. Graupner | Zendy

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Charged defects in highly emissive organic wide-band-gap semiconductors

Author(s) -

Emil List,

C. H. Kim,

J. Shinar,

A. Pogantsch,

G. Leising,

W. Graupner

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.126262

Subject(s) - photoluminescence , organic semiconductor , materials science , semiconductor , wide bandgap semiconductor , band gap , quenching (fluorescence) , charge carrier , optoelectronics , condensed matter physics , fluorescence , physics , optics

A combined photoluminescence (PL) -detected magnetic-resonance (PLDMR) and thermally stimulated current (TSC) study of defects in wide-band-gap para-phenylene-type semiconductors is described. As TSC probes the density of mobile charge carriers after detrapping and PLDMR reveals the influence of trapped charges on the PL, their combination yields the concentration of traps, their energetic position, and their contribution to PL quenching. The reported trap densities, which are 2×1016 for the polymer and 1×1014 cm−3, for the oligomer, are the lowest reported for para-phenylene-type materials.

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