Near-infrared laser pumped intersubband THz laser gain in InGaAs–AlAsSb–InP quantum wells | Zendy

An-Sheng Liu | Zendy; CunZheng Ning | Zendy

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Near-infrared laser pumped intersubband THz laser gain in InGaAs–AlAsSb–InP quantum wells

Author(s) -

An-Sheng Liu,

CunZheng Ning

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.126230

Subject(s) - quantum well , optoelectronics , materials science , laser , terahertz radiation , far infrared laser , infrared , gallium arsenide , semiconductor laser theory , indium gallium arsenide , optics , semiconductor , physics

We investigate the possibility of using InGaAs–AlAsSb–InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 μm as pump sources. Taking into account the pump–probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump–probe coherent interactions.

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