Adatom condensation and quantum dot sizes in InGaAs/GaAs (001) | Zendy

R. León | Zendy; J. Wellman | Zendy; Xiaozhou Liao | Zendy; Jin Zou | Zendy; D. J. H. Cockayne | Zendy

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Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)

Author(s) -

R. León,

J. Wellman,

Xiaozhou Liao,

Jin Zou,

D. J. H. Cockayne

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.126095

Subject(s) - quantum dot , transmission electron microscopy , materials science , gallium arsenide , condensation , molecular physics , condensed matter physics , microscopy , optoelectronics , nanotechnology , chemistry , optics , physics , thermodynamics

The sizes and concentrations of capped and surface InGaAs/GaAs quantum dots(QDs) grown under the same conditions have been investigated. Comparisons obtained with transmission electron microscopy and scanning probe microscopy imaging show a significant enlargement in the sizes of surface QDs compared with capped QDs. This discrepancy in dot dimensions increases with decreasing island surface densities and can be partially explained by thermal adatom condensation during sample cooling. These findings suggest a technique to estimate adatom concentrations and their migration lengths in strained heteroepitaxy.

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