Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection
Author(s) -
Paola Borri,
W. Langbein,
J. M. Hvam,
F. Heinrichsdorff,
M. Mao,
D. Bimberg
Publication year - 2000
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.126038
Subject(s) - dephasing , quantum dot , four wave mixing , optoelectronics , photon , materials science , amplifier , physics , condensed matter physics , optics , laser , nonlinear optics , cmos
Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state.
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