Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system | Zendy

Ulrich F. Keyser | Zendy; H. W. Schumacher | Zendy; U. Zeitler | Zendy; R. J. Haug | Zendy; K. Eberl | Zendy

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Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system

Author(s) -

Ulrich F. Keyser,

H. W. Schumacher,

U. Zeitler,

R. J. Haug,

K. Eberl

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.125786

Subject(s) - heterojunction , transistor , fabrication , quantum tunnelling , coulomb blockade , materials science , current (fluid) , electron , optoelectronics , scanning tunneling microscope , anode , chemistry , nanotechnology , electrode , electrical engineering , voltage , physics , medicine , alternative medicine , pathology , quantum mechanics , engineering

The surface layers of a GaAs/AlGaAs heterostructure are locally oxidized using an atomic force microscope. The local anodic oxidation depletes the underlying two-dimensional electron gas leading to the formation of tunneling barriers. The height of the barriers is determined by measuring the thermally activated current. By varying the oxidation current, the barrier heights can be tuned between a few meV and more than 100 meV. Using these barriers as tunneling elements, a side gated single-electron transistor is fabricated.

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