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Local structures of free-standing AlxGa1−xN thin films studied by extended x-ray absorption fine structure
Author(s) -
K. M. Yu,
W. Shan,
C. J. Glover,
M. C. Ridgway,
William S. Wong,
Wei Yang
Publication year - 1999
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.125548
Subject(s) - bond length , extended x ray absorption fine structure , crystallography , electron shell , absorption spectroscopy , bond strength , materials science , absorption (acoustics) , alloy , chemistry , molecular geometry , composition (language) , analytical chemistry (journal) , crystal structure , ion , molecule , optics , nanotechnology , metallurgy , physics , ionization , philosophy , adhesive , linguistics , composite material , layer (electronics) , chromatography , organic chemistry
This work was supported by the Director, Office of Science, Of- fice of Basic Energy Sciences, Materials Science Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098. The LLO work was performed at the UC Berkeley Integrated Materials Laboratory which was supported in part by the National Science Foundation. C.J.G. and M.C.R. were supported by the Australian Synchrotron Research Program, funded by the Commonwealth of Australia via the Major National Research Facilities Program. SSRL was supported by the Office of Basic Energy Sciences of the U.S. Department of Energy.

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