Optical modulation at around 1550 nm in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode | Zendy

J. M. L. Figueiredo | Zendy; A Boyd | Zendy; C.R. Stanley | Zendy; C. N. Ironside | Zendy; Scott G. McMeekin | Zendy; A. M. P. Leite | Zendy

Open Access

Optical modulation at around 1550 nm in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode

Author(s) -

J. M. L. Figueiredo,

A Boyd,

C.R. Stanley,

C. N. Ironside,

Scott G. McMeekin,

A. M. P. Leite

Publication year - 1999

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.125290

Subject(s) - optoelectronics , materials science , quantum tunnelling , waveguide , resonant tunneling diode , diode , modulation (music) , optical modulator , optics , gallium arsenide , wavelength , amplifier , quantum well , physics , laser , phase modulation , cmos , acoustics , phase noise

We report electro-absorption modulation of light at around 1550 nm in aunipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrierresonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increasesthe electric field across the waveguide, which shifts the core materialabsorption band-edge to longer wavelengths via the Franz-Keldysh effect, thuschanging the light-guiding characteristics of the waveguide. Low-frequencycharacterisation of a device shows modulation up to 28 dB at 1565 nm. When dcbiased close to the negative differential conductance (NDC) region, the RTDoptical waveguide behaves as an electro-absorption modulator integrated with awide bandwidth electrical amplifier, offering a potential advantage overconventional pn modulators.

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