Nanomachining of mesoscopic electronic devices using an atomic force microscope | Zendy

H. W. Schumacher | Zendy; Ulrich F. Keyser | Zendy; U. Zeitler | Zendy; R. J. Haug | Zendy; K. Eberl | Zendy

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Nanomachining of mesoscopic electronic devices using an atomic force microscope

Author(s) -

H. W. Schumacher,

Ulrich F. Keyser,

U. Zeitler,

R. J. Haug,

K. Eberl

Publication year - 1999

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.124611

Subject(s) - mesoscopic physics , heterojunction , materials science , transistor , optoelectronics , quantum tunnelling , fabrication , fermi gas , atomic force microscopy , electron microscope , nanotechnology , atomic units , electron , condensed matter physics , optics , electrical engineering , voltage , physics , medicine , alternative medicine , engineering , pathology , quantum mechanics

An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated.

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