Open AccessPendeoepitaxy of gallium nitride thin films
Author(s) -
K. J. Linthicum,
Thomas Gehrke,
Darren B. Thomson,
E.P. Carlson,
Pradeep Rajagopal,
Tim Smith,
Dale Batchelor,
R. F. Davis
Publication year - 1999
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.124317
Subject(s) - materials science , photoluminescence , gallium nitride , transmission electron microscopy , epitaxy , optoelectronics , coalescence (physics) , wide bandgap semiconductor , sapphire , dislocation , thin film , substrate (aquarium) , layer (electronics) , nitride , crystallography , composite material , nanotechnology , optics , chemistry , laser , oceanography , physics , astrobiology , geology
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