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Deep levels in p-type InGaAsN lattice matched to GaAs
Author(s) -
Daewon Kwon,
Robert Kaplar,
S. A. Ringel,
Andrew A. Allerman,
S. R. Kurtz,
E. D. Jones
Publication year - 1999
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.124028
Subject(s) - annealing (glass) , deep level transient spectroscopy , valence band , doping , materials science , band gap , chemical vapor deposition , analytical chemistry (journal) , spectral line , optoelectronics , chemistry , silicon , metallurgy , physics , environmental chemistry , astronomy

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