Open AccessNanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots
Author(s) -
B. Lita,
R. S. Goldman,
Jamie Phillips,
P. Bhattacharya
Publication year - 1999
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.124026
Subject(s) - quantum dot , coalescence (physics) , scanning tunneling microscope , materials science , molecular beam epitaxy , self assembly , nanometre , epitaxy , nanotechnology , gallium arsenide , nanostructure , quantum tunnelling , stack (abstract data type) , optoelectronics , layer (electronics) , physics , composite material , astrobiology , computer science , programming language
We have investigated the vertical organization and evolution of 1-, 5-, 10-, and 20-layer stacks of molecular beam epitaxially grown self-assembled InAs/GaAs quantum dots using high resolution and large-scale cross-sectional scanning tunneling microscopy. We report results regarding the evolution of the dot sizes and shapes, and the assembly of vertically organized columns of stacked dots. As the number of dot layers within a stack is increased, the average spacing between vertically organized columns decreases, and the corresponding dots become more uniform in size. The data also suggest that the coalescence of neighboring stacks of dots has not occurred and therefore coalescence is not the mechanism leading to the observed uniform distribution of dot sizes and column spacings. © 1999 American Institute of Physics
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