Observation of built-in electric field in InP self-assembled quantum dot systems | Zendy

V. G. Davydov | Zendy; I. V. Ignatĭev | Zendy; Hongwen Ren | Zendy; S. Sugou | Zendy; Yasuaki Masumoto | Zendy

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Observation of built-in electric field in InP self-assembled quantum dot systems

Author(s) -

V. G. Davydov,

I. V. Ignatĭev,

Hongwen Ren,

S. Sugou,

Yasuaki Masumoto

Publication year - 1999

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.123993

Subject(s) - quantum dot , heterojunction , electric field , condensed matter physics , reflection (computer programming) , field (mathematics) , gallium arsenide , charge (physics) , materials science , optoelectronics , physics , quantum mechanics , mathematics , computer science , pure mathematics , programming language

Strong Franz–Keldysh oscillations were observed in the nonlinear reflection spectra ofheterostructures with InP self-assembled quantum dots. These oscillations manifest a built-inelectric field of about 30 kV/cm. We propose that this field originates from electric charge capturedby the intrinsic defects on the dot interface. The presence of acceptor-like intrinsic defect states isfound to be a general feature of the InP/InGaP interface but was not observed in other structureswith quantum dots such as InAs/GaAs

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