Open AccessErratum: “Electrical and optical properties of Ge–implanted 4H–SiC” [Appl. Phys. Lett. 74, 540 (1999)]
Author(s) -
G.L. Katulka,
C. Guedj,
J. Kolodzey,
Consultant R. G. Wilson,
C.P. Swann,
M. W. Tsao,
John F. Rabolt
Publication year - 1999
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.123949
Subject(s) - materials science , germanium , optoelectronics , germanium compounds , condensed matter physics , engineering physics , physics , silicon
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