Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor | Zendy

Jung Han | Zendy; Albert G. Baca | Zendy; R. J. Shul | Zendy; C. G. Willison | Zendy; L. Zhang | Zendy; F. Ren | Zendy; A. P. Zhang | Zendy; G. Dang | Zendy; S. M. Donovan | Zendy; X. A. Cao | Zendy; H. Cho | Zendy; K. B. Jung | Zendy; C. R. Abernathy | Zendy; S. J. Pearton | Zendy; R. G. Wilson | Zendy

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Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Author(s) -

Jung Han,

Albert G. Baca,

R. J. Shul,

C. G. Willison,

L. Zhang,

F. Ren,

A. P. Zhang,

G. Dang,

S. M. Donovan,

X. A. Cao,

H. Cho,

K. B. Jung,

C. R. Abernathy,

S. J. Pearton,

R. G. Wilson

Publication year - 1999

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.123942

Subject(s) - common emitter , bipolar junction transistor , heterojunction , optoelectronics , materials science , chemical vapor deposition , doping , secondary ion mass spectrometry , fabrication , heterostructure emitter bipolar transistor , wide bandgap semiconductor , heterojunction bipolar transistor , analytical chemistry (journal) , transistor , ion , chemistry , voltage , electrical engineering , chromatography , medicine , alternative medicine , organic chemistry , pathology , engineering

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