Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice | Zendy

E. Schomburg | Zendy; M. Henini | Zendy; J.M. Chamberlain | Zendy; D.P. Steenson | Zendy; S. Brandl | Zendy; K. Hofbeck | Zendy; K. F. Renk | Zendy; W. Wegscheider | Zendy

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Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice

Author(s) -

E. Schomburg,

M. Henini,

J.M. Chamberlain,

D.P. Steenson,

S. Brandl,

K. Hofbeck,

K. F. Renk,

W. Wegscheider

Publication year - 1999

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.123793

Subject(s) - superlattice , oscillation (cell signaling) , condensed matter physics , laser linewidth , microwave , electron , gunn diode , physics , dipole , gallium arsenide , optoelectronics , optics , chemistry , diode , laser , biochemistry , quantum mechanics

A GaAs/AlAs superlattice with a large miniband (120 meV) showed self-sustained current oscillation at a frequency of 103 GHz giving rise to microwave emission (power 0.5 mW). The emission line had a linewidth of about 1 MHz and was tuneable by about 800 MHz. An analysis suggests that the transport in the superlattice was mainly due to electrons in the lowest miniband and that the oscillation was caused by traveling dipole domains. We also observed frequency locking of the current oscillation attributed to a synchronization of domain propagation by the external high-frequency field

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