Cathodoluminescence enhancement in porous silicon cracked in vacuum
Author(s) -
J. Rams,
Bianchi Méndez,
G. Crăciun,
R. Plugaru,
J. Piqueras
Publication year - 1999
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.123669
Subject(s) - cathodoluminescence , materials science , porous silicon , silicon , substrate (aquarium) , porosity , cathode ray , layer (electronics) , optics , optoelectronics , electron , luminescence , composite material , physics , geology , oceanography , quantum mechanics
An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate
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