Nonlinear 1/f noise characteristics in luminescent porous silicon | Zendy

I. Bloom | Zendy; I. Balberg | Zendy

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Nonlinear 1/f noise characteristics in luminescent porous silicon

Author(s) -

I. Bloom,

I. Balberg

Publication year - 1999

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.123571

Subject(s) - porous silicon , materials science , luminescence , quantum tunnelling , silicon , condensed matter physics , nonlinear system , porous medium , thermal conduction , noise (video) , electrical conductor , chemical physics , optoelectronics , porosity , nanotechnology , molecular physics , physics , composite material , image (mathematics) , quantum mechanics , artificial intelligence , computer science

The authors present prism coupling measurements on Al{sub x}Ga{sub 1{minus}x}As native oxides showing the dependence of refractive index on composition (0.3 {le} x {le} 0.97), oxidation temperature (400 {le} T {le} 500), and carrier gas purity. Index values range from n = 1.490 (x = 0.9, 400) to 1.707 (x = 0.3, 500 C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7%). Native oxides of Al{sub x}Ga{sub 1{minus}x}As (x {le} 0.5) have index values up to 0.27 higher and are less hygroscopic when prepared with a small amount of O{sub 2} in the N{sub 2} + H{sub 2}O process gas. The higher index values are attributed to a greater degree of oxidation of the Ga in the film

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