Open AccessA memory cell with single-electron and metal-oxide-semiconductor transistor integration
Author(s) -
Z. A. K. Durrani,
A. C. Irvine,
H. Ahmed,
Kazuo Nakazato
Publication year - 1999
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.123528
Subject(s) - transistor , materials science , optoelectronics , field effect transistor , silicon , semiconductor , coulomb blockade , substrate (aquarium) , silicon on insulator , electrical engineering , voltage , engineering , oceanography , geology
8/05/14 meb. Publisher version OK to add
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