Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si | Zendy

S. Fatima | Zendy; J. WongLeung | Zendy; John Fitz Gerald | Zendy; C. Jagadish | Zendy

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Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Author(s) -

S. Fatima,

J. WongLeung,

John Fitz Gerald,

C. Jagadish

Publication year - 1999

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.123468

Subject(s) - annealing (glass) , ion , ion implantation , transmission electron microscopy , crystallographic defect , materials science , deep level transient spectroscopy , secondary ion mass spectroscopy , silicon , mass spectrometry , secondary ion mass spectrometry , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , optoelectronics , metallurgy , organic chemistry , chromatography

Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×1012 to 1×1014 cm−2 then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar damage distribution for all implanted species.

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