Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition | Zendy

Zhiwei Huang | Zendy; Jiasai Xu | Zendy; Zhi Ren | Zendy; J. H. Wang | Zendy; Michael P. Siegal | Zendy; P. N. Provencio | Zendy

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Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition

Author(s) -

Zhiwei Huang,

Jiasai Xu,

Zhi Ren,

J. H. Wang,

Michael P. Siegal,

P. N. Provencio

Publication year - 1998

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.122912

Subject(s) - chemical vapor deposition , acetylene , carbon nanotube , materials science , carbon nanotube supported catalyst , chemical engineering , carbon fibers , crystallite , potential applications of carbon nanotubes , carbon nanofiber , nanotechnology , optical properties of carbon nanotubes , nanotube , chemistry , composite material , organic chemistry , metallurgy , composite number , engineering

Highly-oriented, multi-walled carbon nanotubes were grown on polished polycrystalline and single crystal nickel substrates by plasma enhanced hot filament chemical vapor deposition at temperatures below 666"C. The carbon nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 pm in length depending on growth conditions. Acetylene is used as the carbon source for the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio and their flow rates, etc. affect the diameters and uniformity of the carbon nanotubes. In summary, we synthesized large-area highly-oriented carbon nanotubes at temperatures below 666C by plasma-enhanced hot filament chemical vapor deposition. Acetylene gas is used to provide carbon for nanotube growth and ammonia gas is used for dilution and catalysis. Plasma intensity is critical in determining the nanotube aspect ratios (diameter and length), and range of both site and height distributions within a given film

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