Polarization dependence of intraband absorption in self-organized quantum dots | Zendy

S. J. Chua | Zendy; Shijie Xu | Zendy; X. H. Zhang | Zendy; X. C. Wang | Zendy; Ting Mei | Zendy; W. J. Fan | Zendy; C. H. Wang | Zendy; Ji-an Jiang | Zendy; Xuejian Xie | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Polarization dependence of intraband absorption in self-organized quantum dots

Author(s) -

S. J. Chua,

Shijie Xu,

X. H. Zhang,

X. C. Wang,

Ting Mei,

W. J. Fan,

C. H. Wang,

Ji-an Jiang,

Xuejian Xie

Publication year - 1998

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.122347

Subject(s) - quantum dot , photoluminescence , materials science , polarization (electrochemistry) , absorption (acoustics) , condensed matter physics , optoelectronics , doping , molecular physics , chemistry , physics , composite material

Photoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In 0.35Ga 0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for In 0.35Ga 0.65As dots. The experimental results on InAs dots are in agreement with published theoretical calculations. © 1998 American Institute of Physics.link_to_subscribed_fulltex

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research