Open AccessSingle-electron effects in heavily doped polycrystalline silicon nanowires
Author(s) -
A. C. Irvine,
Z. A. K. Durrani,
H. Ahmed,
S. Biesemans
Publication year - 1998
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.122101
Subject(s) - polycrystalline silicon , materials science , nanowire , silicon , grain boundary , condensed matter physics , electron beam lithography , coulomb blockade , doping , crystallite , oscillation (cell signaling) , optoelectronics , nanotechnology , chemistry , resist , electrical engineering , composite material , physics , metallurgy , microstructure , voltage , transistor , biochemistry , engineering , layer (electronics) , thin film transistor
08/05/14 meb. Publisher version, Ok to add
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