Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy | Zendy

Rong Zhang | Zendy; T. F. Kuech | Zendy

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Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy

Author(s) -

Rong Zhang,

T. F. Kuech

Publication year - 1998

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.121144

Subject(s) - photoluminescence , luminescence , materials science , epitaxy , doping , optoelectronics , wide bandgap semiconductor , halide , carbon fibers , analytical chemistry (journal) , laser linewidth , nanotechnology , chemistry , inorganic chemistry , optics , laser , physics , chromatography , layer (electronics) , composite number , composite material

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