Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er | Zendy

David M. Hansen | Zendy; R. Zhang | Zendy; Nathan Perkins | Zendy; S. A. Safvi | Zendy; L. Zhang | Zendy; Kevin L. Bray | Zendy; T. F. Kuech | Zendy

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Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Author(s) -

David M. Hansen,

R. Zhang,

Nathan Perkins,

S. A. Safvi,

L. Zhang,

Kevin L. Bray,

T. F. Kuech

Publication year - 1998

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.121034

Subject(s) - photoluminescence , materials science , luminescence , doping , epitaxy , annealing (glass) , erbium , analytical chemistry (journal) , in situ , optoelectronics , wavelength , wide bandgap semiconductor , hydride , nanotechnology , chemistry , metallurgy , organic chemistry , layer (electronics) , chromatography , metal

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