Open AccessErratum: “Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 68, 1072 (1996)]
Author(s) -
J. Böhrer,
A. Krost,
R. Heitz,
F. Heinrichsdorff,
L. Eckey,
D. Bimberg,
H. Cerva
Publication year - 1997
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.120562
Subject(s) - chemical vapor deposition , heterojunction , materials science , metalorganic vapour phase epitaxy , optoelectronics , chemistry , condensed matter physics , nanotechnology , physics , epitaxy , layer (electronics)
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