Open AccessErratum: “A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel” [Appl. Phys. Lett. 70, 850 (1997)]
Author(s) -
L. Jay Guo,
E. Leobandung,
Stephen Y. Chou
Publication year - 1997
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.120560
Subject(s) - materials science , silicon , nanoscopic scale , metal , cmos , optoelectronics , semiconductor , channel (broadcasting) , oxide , nanotechnology , condensed matter physics , electrical engineering , physics , engineering , metallurgy
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