Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs | Zendy

G. Segschneider | Zendy; T. Dekorsy | Zendy; H. Kurz | Zendy; R. Hey | Zendy; K. Ploog | Zendy

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Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

Author(s) -

G. Segschneider,

T. Dekorsy,

H. Kurz,

R. Hey,

K. Ploog

Publication year - 1997

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.120131

Subject(s) - femtosecond , relaxation (psychology) , enhanced data rates for gsm evolution , ultrashort pulse , dynamics (music) , materials science , condensed matter physics , gallium arsenide , electronic band structure , molecular physics , optoelectronics , chemistry , optics , physics , laser , psychology , social psychology , telecommunications , computer science , acoustics

We investigate the relaxation dynamics of photogenerated carriers in low-temperature grown GaAs by femtosecond pump-probe measurements. The carrier dynamics in the vicinity of the band edge is disentangled in a two-color technique. The filling of shallow bound states close beneath the band edge is resolved. A temporal delay in the occupation of these states as well as a large optical nonlinearity points towards microscopic potential fluctuations forming these states.

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