Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures | Zendy

S. Dueñas | Zendy; Ramón J. Peláez | Zendy; Helena Castán | Zendy; R. Pinacho | Zendy; L. Quintanilla | Zendy; J. Barbolla | Zendy; I. Mártil | Zendy; G. González-Dı́az | Zendy

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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

Author(s) -

S. Dueñas,

Ramón J. Peláez,

Helena Castán,

R. Pinacho,

L. Quintanilla,

J. Barbolla,

I. Mártil,

G. González-Dı́az

Publication year - 1997

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.119658

Subject(s) - conductance , silicon nitride , silicon , materials science , semiconductor , condensed matter physics , electron cyclotron resonance , thin film , plasma , wide bandgap semiconductor , optoelectronics , nanotechnology , physics , quantum mechanics

Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics

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