Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy | Zendy

J. Walachová | Zendy; Jiří Zelinka | Zendy; J. Vaniš | Zendy; D. H. Chow | Zendy; J. N. Schulman | Zendy; S. Karamazov | Zendy; M. Cukr | Zendy; P. Zich | Zendy; Jaroslav Král | Zendy; T. C. McGill | Zendy

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Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

Author(s) -

J. Walachová,

Jiří Zelinka,

J. Vaniš,

D. H. Chow,

J. N. Schulman,

S. Karamazov,

M. Cukr,

P. Zich,

Jaroslav Král,

T. C. McGill

Publication year - 1997

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.119274

Subject(s) - heterojunction , quantum tunnelling , condensed matter physics , electron , spectroscopy , inelastic electron tunneling spectroscopy , quantum well , ballistic conduction , materials science , tunnel effect , electron spectroscopy , atomic physics , physics , scanning tunneling spectroscopy , optics , laser , quantum mechanics

InAs/AlSb resonant tunneling heterostructures have been studied by ballistic electron emission spectroscopy. Current thresholds attributed to quasibound states in the quantum well and emission over the AlSb barriers are observed. The observed shape of thresholds is consistent with inelastic processes in the InAs layers of the structures, where a high number of electron–hole pairs are generated. A threshold consistent with the generation of electron–hole pairs in quantum well states is observed.

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