Open AccessType II recombination and band offset determination in a tensile strained InGaAs quantum well
Author(s) -
C. Lugand,
T. Benyattou,
G. Guillot,
T. Venet,
M. Gendry,
G. Hollinger,
B. Sermage
Publication year - 1997
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.119140
Subject(s) - photoluminescence , quantum well , recombination , band offset , optoelectronics , materials science , offset (computer science) , gallium arsenide , lattice (music) , ultimate tensile strength , excitation , condensed matter physics , band gap , molecular physics , chemistry , optics , valence band , composite material , physics , laser , biochemistry , quantum mechanics , computer science , acoustics , gene , programming language
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