Evidence of annealing effects on a high-density Si/SiO2 interfacial layer | Zendy

S. D. Kosowsky | Zendy; P. S. Pershan | Zendy; K.S. Krisch | Zendy; J. Bevk | Zendy; M. L. Green | Zendy; D. Brasen | Zendy; L. C. Feldman | Zendy; P.K. Roy | Zendy

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Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

Author(s) -

S. D. Kosowsky,

P. S. Pershan,

K.S. Krisch,

J. Bevk,

M. L. Green,

D. Brasen,

L. C. Feldman,

P.K. Roy

Publication year - 1997

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.119090

Subject(s) - annealing (glass) , materials science , layer (electronics) , electron density , oxide , x ray reflectivity , silicon , charge carrier density , reflectivity , condensed matter physics , electron , crystallography , thin film , composite material , optics , nanotechnology , chemistry , optoelectronics , metallurgy , doping , physics , quantum mechanics

Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO2 interface up to 15-A-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.

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