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Hydrogen desorption in SiGe films: A diffusion limited process
Author(s) -
J. Vizoso,
Ferran Martı́n,
J. Suñé,
M. Nafrı́a
Publication year - 1997
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.118429
Subject(s) - desorption , hydrogen , diffusion , materials science , surface diffusion , soft laser desorption , kinetics , thermal desorption spectroscopy , diffusion process , chemical physics , analytical chemistry (journal) , thermodynamics , chemistry , adsorption , physics , knowledge management , innovation diffusion , organic chemistry , quantum mechanics , chromatography , computer science , matrix assisted laser desorption/ionization
A model to explain the hydrogen desorption kinetics in SiGe alloys is presented. This is an extension of a previous desorption model of hydrogen from Si, that considers the presence of three dimer types in the surface in which hydrogen atoms tend to pair before the desorptionreaction.Surfacediffusion is included in the model. The comparison with experimental results shows that desorption is a diffusion limited process

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