Effect of α-HgI2 epitaxial growth on the defect structure of CdTe:Ge substrates | Zendy

Г. Н. Панин | Zendy; J. Piqueras | Zendy; N.V. Sochinskii | Zendy; E. Diéguez | Zendy

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Effect of α-HgI2 epitaxial growth on the defect structure of CdTe:Ge substrates

Author(s) -

Г. Н. Панин,

J. Piqueras,

N.V. Sochinskii,

E. Diéguez

Publication year - 1997

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.118237

Subject(s) - cathodoluminescence , epitaxy , tellurium , cadmium telluride photovoltaics , heterojunction , impurity , layer (electronics) , substrate (aquarium) , materials science , scanning electron microscope , crystallography , getter , optoelectronics , chemistry , luminescence , nanotechnology , metallurgy , biology , organic chemistry , composite material , ecology

The aα-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mu m from the α-Hgl_2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V-Te generation at the interface take place during α-Hgl_2 epitaxial growth

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