Open AccessErratum: ‘‘Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopy’’ [Appl. Phys. Lett. 69, 494 (1996)]
Author(s) -
Z. Zhang,
M.A. Kulakov,
B. Bullemer,
I. Eisele,
А. В. Зотов
Publication year - 1996
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.118151
Subject(s) - scanning tunneling microscope , epitaxy , materials science , silicon , condensed matter physics , quantum tunnelling , surface (topology) , optoelectronics , nanotechnology , crystallography , chemistry , physics , layer (electronics) , geometry , mathematics
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