Open AccessMeasurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates
Author(s) -
P. Maigné,
M. Gendry,
T. Venet,
Y. Tahri,
G. Hollinger
Publication year - 1996
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.117805
Subject(s) - materials science , epitaxy , indium , stress relaxation , asymmetry , dislocation , condensed matter physics , diffraction , thermal expansion , strain (injury) , ultimate tensile strength , crystallography , indium phosphide , plasticity , lattice constant , composite material , optics , gallium arsenide , optoelectronics , chemistry , medicine , creep , physics , layer (electronics) , quantum mechanics
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