Electron paramagnetic resonance of erbium doped silicon | Zendy

J. David Carey | Zendy; John F. Donegan | Zendy; R.C. Barklie | Zendy; F. Priolo | Zendy; G. Franzò | Zendy; S. Coffa | Zendy

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Electron paramagnetic resonance of erbium doped silicon

Author(s) -

J. David Carey,

John F. Donegan,

R.C. Barklie,

F. Priolo,

G. Franzò,

S. Coffa

Publication year - 1996

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.117127

Subject(s) - electron paramagnetic resonance , silicon , erbium , impurity , materials science , monoclinic crystal system , doping , nuclear magnetic resonance , analytical chemistry (journal) , paramagnetism , crystallography , condensed matter physics , chemistry , crystal structure , optoelectronics , physics , organic chemistry , chromatography

Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 10^15 Er/cm2. One sample was coimplanted with oxygen to give an impurity concentration of 10^20 O/cm3 and 10^19 Er/cm3. In this coimplanted sample, sharp lines are observed which are identified as arising from a single spin 1/2 Er3+ center having a g tensor exhibiting monoclinic C1h symmetry. The principal g values and tilt angle are g1=0.80, g2=5.45, g3=12.60, and τ=2.6°. In the absence of O, the sharp lines are not observed. No Er3+ cubic centers were detected in either sample. Possible structures for the center are discusse

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