p- to n-type conversion in GaSb by ion beam milling | Zendy

Г. Н. Панин | Zendy; Pradip Dutta | Zendy; J. Piqueras | Zendy; E. Diéguez | Zendy

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p- to n-type conversion in GaSb by ion beam milling

Author(s) -

Г. Н. Панин,

Pradip Dutta,

J. Piqueras,

E. Diéguez

Publication year - 1995

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.115325

Subject(s) - getter , ion beam , ion , argon , conductivity , materials science , luminescence , cathodoluminescence , energy conversion efficiency , analytical chemistry (journal) , optoelectronics , chemistry , atomic physics , physics , organic chemistry , chromatography

Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native accepters originally present in the as-grown samples

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