Mechanisms for polycrystalline silicon defect passivation by hydrogenation in an electron cyclotron resonance plasma | Zendy

E. S. Cielaszyk | Zendy; K. H. R. Kirmse | Zendy; Rodney A. Stewart | Zendy; A. Wendt | Zendy

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Mechanisms for polycrystalline silicon defect passivation by hydrogenation in an electron cyclotron resonance plasma

Author(s) -

E. S. Cielaszyk,

K. H. R. Kirmse,

Rodney A. Stewart,

A. Wendt

Publication year - 1995

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.114877

Subject(s) - electron cyclotron resonance , polycrystalline silicon , passivation , silicon , materials science , langmuir probe , dissociation (chemistry) , atomic physics , plasma , hydrogen , grain boundary , secondary ion mass spectrometry , ion , analytical chemistry (journal) , plasma diagnostics , chemistry , thin film transistor , optoelectronics , nanotechnology , metallurgy , layer (electronics) , physics , microstructure , organic chemistry , quantum mechanics , chromatography

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