Open AccessGrowth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen
Author(s) -
Christopher M. Rouleau,
D. H. Lowndes,
James W. McCamy,
J. D. Budai,
D. B. Poker,
David B. Geohegan,
Alexander A. Puretzky,
Shan Zhu
Publication year - 1995
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.114453
Subject(s) - molecular beam epitaxy , doping , materials science , laser ablation , analytical chemistry (journal) , plasma , epitaxy , stoichiometry , thin film , laser , excited state , molecular beam , optoelectronics , atomic physics , chemistry , optics , nanotechnology , molecule , layer (electronics) , physics , organic chemistry , chromatography , quantum mechanics
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