Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi-insulating GaAs | Zendy

Z-Q. Fang | Zendy; D. C. Look | Zendy

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Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi-insulating GaAs

Author(s) -

Z-Q. Fang,

D. C. Look

Publication year - 1995

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.114268

Subject(s) - quenching (fluorescence) , materials science , electric field , thermal , current (fluid) , activation energy , field (mathematics) , temperature gradient , optoelectronics , analytical chemistry (journal) , chemistry , thermodynamics , optics , physics , fluorescence , mathematics , quantum mechanics , pure mathematics , chromatography

Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated current signals in the most prominent trap in undoped semi‐insulating (SI) GaAs, T5 with an activation energy of 0.27–0.31 eV. A possible model for the thermal quenching of T5 is discussed, emphasizing the thermally stimulated nature of the quenching process, the effect of electric field and the formation of high‐field domains. The thermal quenching of T5 can frequency be observed in SI GaAs grown by the vertical gradient freeze (VGF) technique, or by the liquid encapsulated Czochralski (LEC) technique under certain conditions.

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