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Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated current signals in the most prominent trap in undoped semi‐insulating (SI) GaAs, T5 with an activation energy of 0.27–0.31 eV. A possible model for the thermal quenching of T5 is discussed, emphasizing the thermally stimulated nature of the quenching process, the effect of electric field and the formation of high‐field domains. The thermal quenching of T5 can frequency be observed in SI GaAs grown by the vertical gradient freeze (VGF) technique, or by the liquid encapsulated Czochralski (LEC) technique under certain conditions.

Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi-insulating GaAs