Open AccessErratum: ‘‘Electrical properties of oxides grown on strained SiGe layer at low temperatures in a microwave oxygen plasma’’ [Appl. Phys. Lett. 65, 895 (1994)]
Author(s) -
M. Mukhopadhyay,
S. K. Ray,
C. K. Maiti,
Deepak Kumar Nayak,
Y. Shiraki
Publication year - 1995
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.114225
Subject(s) - microwave , oxygen , materials science , layer (electronics) , plasma , condensed matter physics , optoelectronics , engineering physics , nanotechnology , chemistry , physics , quantum mechanics , organic chemistry
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