Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy | Zendy

Silva K. Theiss | Zendy; D. M. Chen | Zendy; J. A. Golovchenko | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy

Author(s) -

Silva K. Theiss,

D. M. Chen,

J. A. Golovchenko

Publication year - 1995

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.114052

Subject(s) - condensed matter physics , scanning tunneling microscope , germanium , quantum tunnelling , lattice (music) , materials science , relaxation (psychology) , lattice constant , silicon , optics , physics , diffraction , metallurgy , acoustics , psychology , social psychology

We use the tunneling microscope to measure the surface lattice spacing of Ge islands grown on Si(111) as a function of their height. It changes in three stages: (I) (0–50 layers tall) Rapid relaxation from near the bulk Si value, at the end of which the lattice spacing atop some of the islands exceeds that of bulk Ge. (II) (50–80 layers) Rapid decrease in surface lattice spacing, to nearly 2% below the bulk Ge value. (III) (≳80 layers) Gradual relaxation to the bulk value. Additional observations of dislocations and analysis of island widths are used to explain this behavior.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research