Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates | Zendy

Scott D. Wolter | Zendy; M. T. McClure | Zendy; Jeffrey T. Glass | Zendy; Brian R. Stoner | Zendy

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Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates

Author(s) -

Scott D. Wolter,

M. T. McClure,

Jeffrey T. Glass,

Brian R. Stoner

Publication year - 1995

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.113483

Subject(s) - diamond , nucleation , materials science , crystal twinning , material properties of diamond , raman spectroscopy , chemical vapor deposition , scanning electron microscope , carbide , crystallography , composite material , chemical engineering , nanotechnology , chemistry , microstructure , optics , physics , organic chemistry , engineering

The bias‐enhanced nucleation (BEN) technique has been applied to TiC(111) substrates and resulted in deposition of oriented diamond particles. The orientation was observed via scanning electron microscopy. A dense region of oriented particles was not observed on the samples, presumably due to the excessive twinning of the diamond. However, micrographs taken throughout the substrate showed diamond particles having similar orientation with respect to each other. Some of the diamond particles showed evidence of azimuthal twist and tilting, resulting most likely from the ∼21% lattice mismatch. Raman spectra of the diamond crystals show a strong feature at 1332 cm−1, which is indicative of diamond, and smaller features at 1480 and 1602 cm−1 due to sp2‐bonded carbon.

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