Cavity characteristics of selectively oxidized vertical-cavity lasers | Zendy

Kent D. Choquette | Zendy; K.L. Lear | Zendy; Richard Schneider | Zendy; K.M. Geib | Zendy

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Cavity characteristics of selectively oxidized vertical-cavity lasers

Author(s) -

Kent D. Choquette,

K.L. Lear,

Richard Schneider,

K.M. Geib

Publication year - 1995

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.113371

Subject(s) - materials science , optoelectronics , laser , resonance (particle physics) , oxide , wavelength , aperture (computer memory) , layer (electronics) , optics , current (fluid) , active layer , semiconductor laser theory , composite material , electrical engineering , particle physics , engineering , thin film transistor , physics , diode , acoustics , metallurgy

We show that a buried oxide layer forming a current aperture in an all epitaxial vertical‐cavity surface emitting laser has a profound influence on the optical and electrical characteristics of the device. The lateral index variation formed around the oxide current aperture leads to a shift in the cavity resonance wavelength. The resonance wavelength under the oxide layer can thus be manipulated, independent of the as‐grown cavity resonance, by adjusting the oxide layer thickness and its placement relative to the active region. In addition, the electrical confinement afforded by the oxide layer enables record low threshold current densities and threshold voltages in these lasers.

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