Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures | Zendy

Hisham Menkara | Zendy; B. K. Wagner | Zendy; C. J. Summers | Zendy

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Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

Author(s) -

Hisham Menkara,

B. K. Wagner,

C. J. Summers

Publication year - 1995

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.113360

Subject(s) - avalanche photodiode , apds , impact ionization , optoelectronics , materials science , ionization , doping , single photon avalanche diode , avalanche breakdown , breakdown voltage , quantum well , avalanche diode , noise (video) , electron , voltage , physics , optics , ion , detector , quantum mechanics , computer science , image (mathematics) , artificial intelligence , laser

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure‐induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low‐voltage gain is primarily due to electron ionization in the MQW‐APDs, and to both electron and hole ionization in the conventional APDs. For the doped MQW APDs, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure‐induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low‐voltage gain is primarily due to electron ionization in the MQW‐APDs, and to both electron and hole ionization in the conventional APDs. For the doped MQW APDs, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

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