Segregation and trapping of erbium during silicon molecular beam epitaxy | Zendy

R. Serna | Zendy; M. Lohmeier | Zendy; P. M. Zagwijn | Zendy; Elias Vlieg | Zendy; Albert Polman | Zendy

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Segregation and trapping of erbium during silicon molecular beam epitaxy

Author(s) -

R. Serna,

M. Lohmeier,

P. M. Zagwijn,

Elias Vlieg,

Albert Polman

Publication year - 1995

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.113209

Subject(s) - erbium , molecular beam epitaxy , epitaxy , silicon , trapping , materials science , silicide , doping , oxygen , optoelectronics , chemical physics , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , layer (electronics) , ecology , organic chemistry , biology , chromatography

3 pages, 4 figures.Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si(100) at 600 °C. Once a critical Er surface areal density of 2 × 1014 Er/cm2 is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si(100) is fully avoided when growth is performed in an oxygen background pressure of ~ 10 – 10 mbar, due to the formation of Er-O complexes. No Er segregation is observed on Si(111), which is attributed to the formation of epitaxial Er3Si5 precipitates.This work is part of the research program of FOM\udand was made possible by financial support from NWO,\udSTW, and IOP Electro-Optics. R. Serna acknowledges financial\udsupport from CSIC, Spain.Peer reviewe

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