Open AccessResponse to ‘‘Comment on ‘Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects’ ’’ [Appl. Phys. Lett.65, 1320 (1994)]
Author(s) -
H.J. Gossmann,
C.S. Rafferty,
A. M. Vredenberg,
H. S. Luftman,
F. C. Unterwald,
D. J. Eaglesham,
D. C. Jacobson,
T. Boone,
J. M. Poate
Publication year - 1994
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.113006
Subject(s) - dopant , doping , diffusion , materials science , crystallographic defect , condensed matter physics , silicon , point (geometry) , thermodynamics , physics , optoelectronics , mathematics , geometry
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