Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy | Zendy

Hidemi Shigekawa | Zendy; Haruhiro Oigawa | Zendy; Koji Miyake | Zendy; Yoshiaki Aiso | Zendy; Yasuo Nannichi | Zendy; Tomihiro Hashizume | Zendy; Тошио Сакурай | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

Author(s) -

Hidemi Shigekawa,

Haruhiro Oigawa,

Koji Miyake,

Yoshiaki Aiso,

Yasuo Nannichi,

Tomihiro Hashizume,

Тошио Сакурай

Publication year - 1994

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.112246

Subject(s) - scanning tunneling microscope , dimer , surface structure , materials science , surface reconstruction , microscopy , gallium arsenide , crystallography , quantum tunnelling , surface (topology) , condensed matter physics , chemistry , nanotechnology , optics , optoelectronics , physics , geometry , mathematics , organic chemistry

An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ~0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research