Band-gap shift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition | Zendy

O. Zelaya-Ángel | Zendy; J. J. AlvaradoGil | Zendy; R. Lozada-Morales | Zendy; H. Vargas | Zendy; A. Ferreira da Silva | Zendy

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Band-gap shift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition

Author(s) -

O. Zelaya-Ángel,

J. J. AlvaradoGil,

R. Lozada-Morales,

H. Vargas,

A. Ferreira da Silva

Publication year - 1994

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.111184

Subject(s) - semiconductor , band gap , photoacoustic spectroscopy , materials science , condensed matter physics , spectroscopy , wide bandgap semiconductor , annealing (glass) , direct and indirect band gaps , absorption edge , diffraction , crystallography , chemistry , optics , optoelectronics , physics , quantum mechanics , composite material

The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs

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