Open AccessStoichiometry control over a wide composition range of sputtered CuGaxIn(1−x)Se2
Author(s) -
J. L. Hernández-Rojas,
M. L. Lucı́a,
I. Mártil,
G. González-Dı́az,
J. Santamarı́a,
F. Sánchez-Quesada
Publication year - 1994
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.110851
Subject(s) - argon , stoichiometry , sputtering , analytical chemistry (journal) , substrate (aquarium) , materials science , sputter deposition , atmospheric temperature range , diffusion , thin film , chemistry , nanotechnology , thermodynamics , oceanography , physics , organic chemistry , chromatography , geology
Films of CuGaxIn(1-x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From CGIS Cu-poor (16 at. %) to Cu2Se. Reevaporation of (Ga,In)2Se3 binaries is observed when substrate temperature is increased at a constant argon pressure (20 mTorr). An increase in Ar pressure from 5 to 150 mTorr at a growth temperature of 450-degrees-C, produces a decrease in Cu atomic percentage from 24% to 16% due to a preferential diffusion of Cu sputtered atoms in the plasma. The relevant film properties of the analyzed films are found to be ruled by the Cu content. Graded composition absorbers with adequate physical properties for the fabrication of photovoltaic devices are grown with a proper choice of growth parameters
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